PART |
Description |
Maker |
APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10050B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 21A 0.500 Ohm
|
Advanced Power Technology
|
APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
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APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
APT10050JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 20.5A 0.50 Ohm
|
Advanced Power Technology
|
APT1004 APT1004RCN |
POWER MOS IV 1000V 3.6A 4.00 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT10021JLL |
LJT 56C 48#20 8#12 SKT WALL RE POWER MOS 7 1000V 37A 0.210 Ohm
|
Advanced Power Technology Ltd.
|
MCT3D65P100F2 MCT3A65P100F2 |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
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INTERSIL[Intersil Corporation]
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